Project Title: Development of Lithography Technology for Nanoscale Structuring of Materials Using Laser Beam Interference.
Acronym: DELILA
Sponsor: EC FP6 IST
Total Amount: € 2,726,434
MEC Budget: € 569,089
Project Start/End Dates: 01 January 2006 - 31 December 2008
MEC Contact:
Scope:
This STREP on “Development of Lithography Technology for Nanoscale Structuring of Materials Using
Laser Beam Interference (DELILA)” directly addresses the IST research areas 2.4.2
“Technologies and devices for micro/nano-scale integration” and 2.4.1 “Nanoelectronics” (IST Work Programme 2005-06).
In particular, DELILA will enable low cost and high efficiency fabrication of surface structures with nano resolution.
Aim and Objectives:
The main aim of DELILA is the development and application of multiple beam interference lithography technology
for nanoscale 2D and 3D structuring of materials in nano photonics, electronics and fabrication.
The project has three objectives:
- Fundamental exploration of multiple beam interference lithography and its capabilities.
This will include the conclusions on the formation of multiple beam interference patterns for nanolithography,
interaction with different materials and boundary conditions, and environmental effects on the performance of
interference lithography.
- Development of computer software for the analysis of interference of several coherent beams of laser
radiation and for the calculation of the results of diffraction of the radiation by periodic structures of
different forms. This will lead to the synthesis and optimization of laser-beam characteristics for obtaining
the required parameters of the created structures.
- Development of the DELILA system. The main outcome of the project will be a nano fabrication tool that has the
potential to create a breakthrough in nanolithography technology for both 2D and 3D structuring of materials.
MEC Role: Coordinator
Project Partners:
- Optoelectronics Research Centre, Tampere University of Technology (ORC), Finland
- SILIOS Technologies SA (SILIOS), France
- Institute of Applied Physics, Russian Academy of Sciences (IAP), Russia
- Department of Microelectronics, Centro de Estudios e Investigaciones Técnicas de Gipuzkoa (CEIT), Spain